features trenchfet power mosfet 175 c maximum junction temperature 100% r g tested sud40n08-16 vishay siliconix document number: 71323 s-40272?rev. c, 23-feb-04 www.vishay.com 1 n-channel 80-v (d-s) 175 c mosfet product summary v ds (v) r ds(on) ( ) i d (a) 80 0.016 @ v gs = 10 v 40 d g s n-channel mosfet to-252 s gd top view drain connected to tab ordering information: sud40n08-16 sud40n08-16?e3 (lead free) absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 80 v gate-source voltage v gs 20 v continuous drain current (t j = 175 c) b t c = 25 c i d 40 continuous drain current (t j = 175 c) b t c = 125 c i d 30 pulsed drain current i dm 60 a continuous source current (diode conduction) i s 40 avalanche current i ar 40 repetitive a valanche energy (duty cycle 1%) l = 0.1 mh e ar 80 mj maximum power dissipation t c = 25 c p 136 b w maximum power dissipation t a = 25 c p d 3 a w operating junction and storage temperature range t j , t stg ? 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit jtitabit a t 10 sec r 15 18 junction-to-ambient a steady state r thja 40 50 c/w junction-to-case r thjc 0.85 1.1 c/w notes a. surface mounted on 1? x1? fr4 board. b. see soa curve for voltage derating.
sud40n08-16 vishay siliconix www.vishay.com 2 document number: 71323 s-40272?rev. c, 23-feb-04 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 80 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 80 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 80 v, v gs = 0 v, t j = 125 c 50 a g dss v ds = 80 v, v gs = 0 v, t j = 175 c 250 on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 60 a v gs = 10 v, i d = 40 a 0.013 0.016 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 40 a, t j = 125 c 0.027 ds(on) v gs = 10 v, i d = 40 a, t j = 175 c 0.037 forward transconductance b g fs v ds = 15 v, i d = 40 a 45 s dynamic a input capacitance c iss 1960 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 370 pf reverse transfer capacitance c rss 200 total gate charge c q g 42 60 gate-source charge c q gs v ds = 40 v, v gs = 10 v, i d = 40 a 7 nc gate-drain charge c q gd ds , gs , d 13 gate resistance r g 0.5 2.7 turn-on delay time c t d(on) 12 20 rise time c t r v dd = 40 v, r l = 1.0 52 80 ns turn-off delay time c t d(off) v dd = 40 v , r l = 1 . 0 i d 40 a, v gen = 10 v, r g = 2.5 25 38 ns fall time c t f 10 15 source-drain diode ratings and characteristic (t c = 25 c) pulsed current i sm 60 a diode forward voltage b v sd i f = 40 a, v gs = 0 v 1.0 1.5 v source-drain reverse recovery time t rr i f = 40 a, di/dt = 100 a/ s 45 70 ns notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature.
sud40n08-16 vishay siliconix document number: 71323 s-40272?rev. c, 23-feb-04 www.vishay.com 3 typical characteristics (25 c unless noted) 0 20 40 60 80 0 20406080100 0 500 1000 1500 2000 2500 3000 0 20406080 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) ? on-resistance ( q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) r ds(on) ) v gs ? transconductance (s) g fs 0 20 40 60 80 100 0246810 0 4 8 12 16 20 0 1530456075 0.00 0.01 0.02 0.03 0.04 0 20406080100 0 20 40 60 80 100 01234567 ? 55 c t c = 125 c v ds = 10 v i d = 40 a v gs = 10 thru 7 v 5 v v gs = 10 v t c = ? 55 c 25 c 125 c c oss c iss i d ? drain current (a) 6 v 25 c c rss 3, 4 v
sud40n08-16 vishay siliconix www.vishay.com 4 document number: 71323 s-40272?rev. c, 23-feb-04 typical characteristics (25 c unless noted) 0.0 0.4 0.8 1.2 1.6 2.0 2.4 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 1 0.01 0.3 0.6 0.9 1.2 v gs = 10 v i d = 40 a 0 0.1 10 t j = 25 c t j = 150 c r ds(on) ? on-resiistance (normalized) thermal ratings safe operating area v ds ? drain-to-source voltage (v) ? drain current (a) i d 10 0.1 0.1 1 10 100 limited by r ds(on) 1 1000 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 110 normalized effective transient thermal impedance maximum avalanche drain current vs. case t emperature t c ? case temperature ( c) ? drain current (a) i d 0 10 20 30 40 50 0 25 50 75 100 125 150 175 0.2 0.1 duty cycle = 0.5 10 ms 100 ms 1 s, dc 30 100 s 10 s 1 ms 0.05 0.02 single pulse 100 t c = 25 c single pulse
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